 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| BF996S N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input and mixer stages in UHF tuner. Features D Integrated gate protection diodes D Low noise figure D Low feedback capacitance 2 1 D High cross modulation performance D Low input capacitance D High AGC-range 3 4 94 9279 BF996S Marking: MH Plastic case (SOT 143) 1 = Source; 2 = Drain; 3 = Gate 2; 4 = Gate 1 Absolute Maximum Ratings Parameters Drain source voltage Drain current Gate 1/gate 2-source peak current Total power dissipation Tamb 60C Channel temperature Storage temperature range Symbol VDS ID IG1/G2SM Ptot TCh Tstg Value 20 30 10 200 150 -65 to +150 Unit V mA mA mW C C Maximum Thermal Resistance Parameters Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 mm Cu Symbol RthChA Value 450 Unit K/W TELEFUNKEN Semiconductors Rev. A1, 17-Apr-96 1 (5) BF996S Electrical DC Characteristics Tamb = 25C Parameters / Test Conditions Drain-source breakdown voltage ID = 10 mA, -VG1S = -VG2S = 4 V Gate 1-source breakdown voltage IG1S = 10 mA, VG2S = VDS = 0 Gate 2-source breakdown voltage IG2S = 10 mA, VG1S = VDS = 0 Gate 1-source leakage current VG1S = 5 V, VG2S = VDS = 0 Gate 2-source leakage current VG2S = 5 V, VG1S = VDS = 0 Drain current VDS = 15 V, VG1S = 0, VG2S = 4 V Type Symbol V(BR)DS V(BR)G1SS V(BR)G2SS IG1SS IG2SS BF 996 S BF 996 SA BF 996 SB IDSS IDSS IDSS -VG1S(OFF) -VG2S(OFF) 4 4 9.5 Min. 20 8 8 14 14 50 50 18 10.5 18 2.5 2.0 Typ. Max. Unit V V V nA nA mA mA mA V V Gate 1-source cut-off voltage VDS = 15 V, VG2S = 4 V, ID = 20 mA Gate 2-source cut-off voltage VDS = 15 V, VG1S = 0, ID = 20 mA Electrical AC Characteristics VDS = 15 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz, Tamb = 25C Parameters / Test Conditions Forward transadmittance Gate 1 input capacitance Gate 2 input capacitance VG1S = 0, VG2S = 4 V Feedback capacitance Output capacitance Power gain VDS = 15 V, ID = 10 mA, VG2S = 4 V, gS = 2 mS, gL = 0.5 mS, f = 200 MHz gS = 3.3 mS, gL = 1 mS, f = 800 MHz AGC range VDS = 15 V, VG2S = 4 to -2 V, f = 800 MHz Noise figure VDS = 15 V, ID = 10 mA, VG2S = 4 V, gS = 2 mS, f = 200 MHz gS = 3.3 mS, f = 800 MHz Type Symbol y21s Cissg1 Cissg2 Crss Coss Min. 15 Typ. 18.5 2.2 1.1 25 10.8 Max. 2.6 Unit mS pF pF fF pF 35 1.2 Gps Gps Gps 25 18 dB dB 40 dB F F 1.0 1.8 dB dB 2 (5) TELEFUNKEN Semiconductors Rev. A1, 17-Apr-96 BF996S Common Source S-Parameters VDS = 15 V, VG2S = 4 V, ID = 5 mA, Z0 = 50 W S11 VDS/V ID/mA f/MHz 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 LIN MAG 0.99 0.98 0.95 0.92 0.89 0.86 0.83 0.80 0.78 0.75 0.72 0.70 0.68 0.99 0.98 0.95 0.92 0.88 0.85 0.82 0.79 0.76 0.73 0.71 0.68 0.66 0.99 0.98 0.94 0.91 0.87 0.84 0.81 0.78 0.75 0.72 0.69 0.67 0.65 ANG deg -8.5 -17.7 -24.6 -32.1 -39.2 -45.8 -52.3 -58.7 -64.7 -70.7 -76.6 -82.5 -88.6 -9.0 -18.7 -26.0 -33.7 -41.2 -48.3 -55.1 -61.6 -67.9 -74.2 -80.2 -86.4 -92.3 -9.4 -19.4 -27.1 -35.0 -42.9 -50.3 -57.2 -63.9 -70.4 -76.8 -82.9 -89.0 -95.1 LIN MAG 1.45 1.52 1.33 1.26 1.18 1.11 1.05 0.99 0.93 0.88 0.84 0.80 0.76 1.82 1.90 1.67 1.58 1.48 1.39 1.32 1.24 1.17 1.11 1.06 1.01 0.97 2.01 2.10 1.84 1.74 1.63 1.53 1.45 1.37 1.29 1.22 1.17 1.12 1.07 S21 ANG deg 164.9 150.9 134.7 121.3 108.4 96.5 85.0 74.1 63.6 53.1 43.7 33.6 24.1 165.3 151.8 136.3 123.3 110.9 99.5 88.7 78.1 67.9 57.9 48.7 38.9 29.6 165.4 152.0 136.7 123.8 111.5 100.3 89.6 79.4 69.2 59.4 50.2 40.8 31.5 LIN MAG 0.001 0.003 0.004 0.004 0.005 0.005 0.004 0.004 0.004 0.004 0.004 0.004 0.006 0.002 0.003 0.004 0.005 0.005 0.005 0.005 0.004 0.004 0.004 0.004 0.004 0.006 0.002 0.003 0.004 0.005 0.005 0.005 0.005 0.005 0.004 0.004 0.004 0.004 0.006 S12 ANG deg 82.2 75.6 67.7 62.8 57.8 57.3 58.9 63.3 73.1 83.5 102.1 120.4 131.7 81.9 75.0 67.2 61.8 56.3 55.8 56.7 60.7 69.9 80.0 98.9 118.2 130.5 81.4 74.6 66.4 60.8 55.1 54.4 54.9 58.5 67.3 76.7 95.2 115.3 128.7 LIN MAG 0.99 0.98 0.97 0.95 0.93 0.92 0.90 0.88 0.86 0.85 0.83 0.82 0.80 0.99 0.98 0.96 0.95 0.93 0.91 0.90 0.88 0.86 0.84 0.83 0.81 0.80 0.98 0.97 0.96 0.94 0.92 0.91 0.89 0.87 0.86 0.84 0.83 0.81 0.79 S22 ANG deg -3.4 -7.1 -9.7 -12.3 -15.1 -17.4 -19.7 -22.0 -24.3 -26.2 -28.4 -30.5 -32.7 -3.5 -7.2 -9.8 -12.6 -15.3 -17.8 -20.0 -22.4 -24.6 -26.6 -28.8 -31.0 -33.3 -3.6 -7.3 -10.0 -12.9 -15.7 -18.0 -20.4 -22.7 -25.0 -27.1 -29.4 -31.6 -33.9 5 15 10 15 TELEFUNKEN Semiconductors Rev. A1, 17-Apr-96 3 (5) BF996S Dimensions in mm 96 12240 4 (5) TELEFUNKEN Semiconductors Rev. A1, 17-Apr-96 BF996S Ozone Depleting Substances Policy Statement It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 TELEFUNKEN Semiconductors Rev. A1, 17-Apr-96 5 (5) |
Price & Availability of BF996S
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |